Workshop on hydrogen effect in InP and related compounds
Identifieur interne : 000344 ( Main/Exploration ); précédent : 000343; suivant : 000345Workshop on hydrogen effect in InP and related compounds
Auteurs : RBID : ISTEX:12243_1991_Article_BF03000721.pdfDescripteurs français
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- topic : Hydrogène.
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Abstract
One of the primary technological interests in hydrogen in semiconductors concerns the ease with which it is introduced during crystal growth and processing. Hydrogen can move during device operations and hence alter device characteristics. It is thus necessary to understand how hydrogen is introduced in semiconductors and to be able to detect its presence. Thus, in order to give potential answers to these problems, several topics were discussed. They covered all the hydrogenation effects through : device-related applications, hydrogen-surface interaction, acceptors and donor passivation, unintentional hydrogénation, proton implantation and related problems. Finally, unsolved issues are reviewed in a final talk.
DOI: 10.1007/BF03000721
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Briand, F-92195, Meudon Principal</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Meudon Principal</settlement></placeName></affiliation></author><author><name>Bernard Clerjaud</name><affiliation wicri:level="1"><mods:affiliation>UPMC, Tour 13, 4, place Jussieu, F-75252, Paris, Cedex 05, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>UPMC, Tour 13, 4, place Jussieu, F-75252, Paris, Cedex 05</wicri:regionArea><wicri:noRegion>Cedex 05</wicri:noRegion><wicri:noRegion>Cedex 05</wicri:noRegion></affiliation></author><author><name>Eyrug Davies</name><affiliation wicri:level="1"><mods:affiliation>USEORD, 223 Old Marylebone Road, NW1 5TH, London, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>USEORD, 223 Old Marylebone Road, NW1 5TH, London</wicri:regionArea><placeName><settlement type="city">Londres</settlement><region type="country">Angleterre</region><region type="région" nuts="1">Grand Londres</region></placeName></affiliation></author><author><name>Jean-Michel Dumas</name><affiliation wicri:level="3"><mods:affiliation>CNET, LAB-OCM, B.P. 40, F-22301, Lannion, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>CNET, LAB-OCM, B.P. 40, F-22301, Lannion</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>Noble Johnson</name><affiliation wicri:level="1"><mods:affiliation>Xerox Research Center, 3333 Coyote Hill Road, CA94304, Palo Alto, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Xerox Research Center, 3333 Coyote Hill Road, CA94304, Palo Alto</wicri:regionArea><wicri:noRegion>Palo Alto</wicri:noRegion></affiliation></author><author><name>Ronald C. 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Guy de Collongue, B.P. 163, F-63131, Ecully Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Ecole Centrale, 36, av. Guy de Collongue, B.P. 163, F-63131, Ecully Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne</region><settlement type="city">Ecully</settlement></placeName></affiliation></author><author><name>John Zavada</name><affiliation wicri:level="1"><mods:affiliation>USARDSG, 223 Old Marglebona Road, NW1 5TH, London, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>USARDSG, 223 Old Marglebona Road, NW1 5TH, London</wicri:regionArea><placeName><settlement type="city">Londres</settlement><region type="country">Angleterre</region><region type="région" nuts="1">Grand Londres</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:12243_1991_Article_BF03000721.pdf</idno><date when="1991">1991</date><idno type="doi">10.1007/BF03000721</idno><idno type="wicri:Area/Main/Corpus">000210</idno><idno type="wicri:Area/Main/Curation">000210</idno><idno type="wicri:Area/Main/Exploration">000344</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Congress</term><term>Hydrogen</term><term>III-V compound</term><term>Indium phosphide</term><term>Semiconductor</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Hydrogène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">One of the primary technological interests in hydrogen in semiconductors concerns the ease with which it is introduced during crystal growth and processing. Hydrogen can move during device operations and hence alter device characteristics. It is thus necessary to understand how hydrogen is introduced in semiconductors and to be able to detect its presence. Thus, in order to give potential answers to these problems, several topics were discussed. They covered all the hydrogenation effects through : device-related applications, hydrogen-surface interaction, acceptors and donor passivation, unintentional hydrogénation, proton implantation and related problems. Finally, unsolved issues are reviewed in a final talk.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="22fc1cf9afd85fd4bdbf9d11e993c45268000a70"><titleInfo lang="eng"><title>Workshop on hydrogen effect in InP and related compounds</title></titleInfo><titleInfo lang="fre"><title>Atelier sur les effets de l’hydrogène dans InP et composés dérivés</title></titleInfo><name type="personal"><namePart type="given">Jacques</namePart><namePart type="family">Chevallier</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>CNRS/LPS, 1, place A. Briand, F-92195, Meudon Principal, France</affiliation></name><name type="personal"><namePart type="given">Bernard</namePart><namePart type="family">Clerjaud</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>UPMC, Tour 13, 4, place Jussieu, F-75252, Paris, Cedex 05, France</affiliation></name><name type="personal"><namePart type="given">Eyrug</namePart><namePart type="family">Davies</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>USEORD, 223 Old Marylebone Road, NW1 5TH, London, UK</affiliation></name><name type="personal"><namePart type="given">Jean-Michel</namePart><namePart type="family">Dumas</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>CNET, LAB-OCM, B.P. 40, F-22301, Lannion, France</affiliation></name><name type="personal"><namePart type="given">Noble</namePart><namePart type="family">Johnson</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Xerox Research Center, 3333 Coyote Hill Road, CA94304, Palo Alto, USA</affiliation></name><name type="personal"><namePart type="given">Ronald C.</namePart><namePart type="family">Newman</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Imperial College of Sciences Technology and Médecine, Prince Consort Road, SW7 2BZ, London, UK</affiliation></name><name type="personal"><namePart type="given">Michael</namePart><namePart type="family">Stavola</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Lehigh University, 18015, Bethlehem, PA, USA</affiliation></name><name type="personal"><namePart type="given">Pierre</namePart><namePart type="family">Viktorovitch</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Ecole Centrale, 36, av. Guy de Collongue, B.P. 163, F-63131, Ecully Cedex, France</affiliation></name><name type="personal"><namePart type="given">John</namePart><namePart type="family">Zavada</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>USARDSG, 223 Old Marglebona Road, NW1 5TH, London, UK</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Paris</publisher><dateCreated encoding="w3cdtf">1990-04-09</dateCreated><dateCaptured encoding="w3cdtf">1990-10-01</dateCaptured><dateValid encoding="w3cdtf">2008-11-29</dateValid><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">One of the primary technological interests in hydrogen in semiconductors concerns the ease with which it is introduced during crystal growth and processing. Hydrogen can move during device operations and hence alter device characteristics. It is thus necessary to understand how hydrogen is introduced in semiconductors and to be able to detect its presence. Thus, in order to give potential answers to these problems, several topics were discussed. They covered all the hydrogenation effects through : device-related applications, hydrogen-surface interaction, acceptors and donor passivation, unintentional hydrogénation, proton implantation and related problems. Finally, unsolved issues are reviewed in a final talk.</abstract><abstract lang="fre">Un des principaux intérêts technologiques quant à l’hydrogène dans les semiconducteurs est relatif à la facilité avec laquelle il s’introduit dans le cristal pendant la croissance et la fabrication. L’hydrogène peut se déplacer pendant le fonctionnement du dispositif et en dégrade les performances. Il est donc nécessaire d’une part de comprendre comment l’hydrogène s’introduit et d’autre part d’être capable de détecter sa présence. Ainsi de manière à apporter des réponses potentielles à ces problèmes, plusieurs thèmes furent abordés. Ils couvrent tous les effets associés à l’hydrogène, c’est-à-dire les applications liées aux dispositifs, l’interaction hydrogène-surface, la passivation des donneurs et accepteurs, l’hydrogénation non intentionnelle, l’implantation protonique et problèmes associés. Un résumé des problèmes non résolus est présenté à la fin de l’atelier.</abstract><subject lang="eng"><genre>Key words</genre><topic>Indium phosphide</topic><topic>III-V compound</topic><topic>Semiconductor</topic><topic>Hydrogen</topic><topic>Congress</topic></subject><subject lang="fre"><genre>Mots clés</genre><topic>Indium phosphure</topic><topic>Composé III-V</topic><topic>Semiconducteur</topic><topic>Hydrogène</topic><topic>Congrès</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Ann. Télécommun.</title></titleInfo><titleInfo><title>Annales des Télécommunications</title><partNumber>Year: 1991</partNumber><partNumber>Volume: 46</partNumber><partNumber>Number: 3-4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1991-03-01</dateIssued><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Communications Engineering, Networks</topic><topic>Information Systems and Communication Service</topic><topic>Signal, Image and Speech Processing</topic><topic>Computer Communication Networks</topic><topic>Information and Communication, Circuits</topic><topic>R & D/Technology Policy</topic></subject><identifier type="issn">0003-4347</identifier><identifier type="issn">Electronic: 1958-9395</identifier><identifier type="matrixNumber">12243</identifier><identifier type="local">IssueArticleCount: 9</identifier><recordInfo><recordOrigin>Institut Telecom / Springer-Verlag France, 1991</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF03000721</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF03000721</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>171</start><end>180</end></extent></part><recordInfo><recordOrigin>Institut Telecom / Springer-Verlag France, 1991</recordOrigin><recordIdentifier>12243_1991_Article_BF03000721.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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